? semiconductor components industries, llc, 2012 may, 2012 ? rev. 6 1 publication order number: tip140/d tip140, tip141, tip142, (npn); tip145, tip146, tip147, (pnp) darlington complementary silicon power transistors designed for general ? purpose amplifier and low frequency switching applications. features ? high dc current gain ? min h fe = 1000 @ i c = 5.0 a, v ce = 4 v ? collector ? emitter sustaining voltage ? @ 30 ma v ceo(sus) = 60 vdc (min) ? tip140, tip145 = 80 vdc (min) ? tip141, tip146 = 100 vdc (min) ? tip142, tip147 ? monolithic construction with built ? in base ? emitter shunt resistor ? these are pb ? free devices* maximum ratings rating symbol tip140 tip145 tip141 tip146 tip142 tip147 unit collector ? emitter voltage v ceo 60 80 100 vdc collector ? base voltage v cb 60 80 100 vdc emitter ? base voltage v eb 5.0 vdc collector current ? continuous ? peak (note 1) i c 10 15 adc base current ? continuous i b 0.5 adc total power dissipation @ t c = 25 c p d 125 w operating and storage junction temperature range t j , t stg ? 65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 1.0 c/w thermal resistance, junction ? to ? ambient r ja 35.7 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. 5 ms, 10% duty cycle. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 10 ampere darlington complementary silicon power transistors 60 ? 100 volts, 125 watts see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information http://onsemi.com sot ? 93 (to ? 218) case 340d style 1 to ? 247 case 340l style 3 note: effective june 2012 this device will be available only in the to ? 247 package. reference fpcn# 16827.
tip140, tip141, tip142, (npn); tip145, tip146, tip147, (pnp) http://onsemi.com 2 marking diagrams aywwg tip14x tip14x aywwg 1 base 2 collector 3 emitter tip14x = device code a = assembly location y = year ww = work week g=pb ? free package 1 base 2 collector 3 emitter to ? 247 to ? 218 darlington schematics base emitter collector 8.0 k 40 base emitter collector 8.0 k 40 npn tip140 tip141 tip142 pnp tip145 tip146 tip147 ordering information device package shipping tip140g sot ? 93 (to ? 218) (pb ? free) 30 units / rail tip141g sot ? 93 (to ? 218) (pb ? free) 30 units / rail tip142g sot ? 93 (to ? 218) (pb ? free) 30 units / rail tip145g sot ? 93 (to ? 218) (pb ? free) 30 units / rail TIP146G sot ? 93 (to ? 218) (pb ? free) 30 units / rail tip147g sot ? 93 (to ? 218) (pb ? free) 30 units / rail tip140g to ? 247 (pb ? free) 30 units / rail tip141g to ? 247 (pb ? free) 30 units / rail tip142g to ? 247 (pb ? free) 30 units / rail tip145g to ? 247 (pb ? free) 30 units / rail TIP146G to ? 247 (pb ? free) 30 units / rail tip147g to ? 247 (pb ? free) 30 units / rail
tip140, tip141, tip142, (npn); tip145, tip146, tip147, (pnp) http://onsemi.com 3 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? ???? ???? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ??????????????????? ??????????????????? ??????????????????? ??????????????????? collector ? emitter sustaining voltage (note 2) (i c = 30 ma, i b = 0) tip140, tip145 tip141, tip146 tip142, tip147 ????? ????? ????? ????? ???? ???? ???? ???? ??? ??? ??? ??? ? ? ? ???? ???? ???? ???? ??? ??? ??? ??? vdc ??????????????????? ??????????????????? ??????????????????? ??????????????????? ????? ????? ????? ????? ???? ???? ???? ???? ? ? ? ??? ??? ??? ??? ???? ???? ???? ???? 2.0 2.0 2.0 ??? ??? ??? ??? ??????????????????? ??????????????????? ??????????????????? ??????????????????? ????? ????? ????? ????? ???? ???? ???? ???? ? ? ? ??? ??? ??? ??? ???? ???? ???? ???? 1.0 1.0 1.0 ??? ??? ??? ??? ??????????????????? ??????????????????? ????? ????? ???? ???? ? ??? ??? ???? ???? 2 0 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 2) ??????????????????? ??????????????????? ??????????????????? ??????????????????? ????? ????? ????? ????? ???? ???? ???? ???? ??? ??? ??? ??? ? ? ???? ???? ???? ???? ??? ??? ??? ??? ??????????????????? ??????????????????? ??????????????????? collector ? emitter saturation voltage (i c = 5.0 a, i b = 10 ma) (i c = 10 a, i b = 40 ma) ????? ????? ????? ???? ???? ???? ? ? ??? ??? ??? ???? ???? ???? 2.0 3.0 ??? ??? ??? ??????????????????? ??????????????????? ??????????????????? ? emitter saturation voltage (i c = 10 a, i b = 40 ma) ????? ????? ????? ???? ???? ???? ? ??? ??? ??? ???? ???? ???? 3.5 ??? ??? ??? ??????????????????? ??????????????????? ??????????????????? ? emitter on voltage (i c = 10 a, v ce = 4.0 vdc) ????? ????? ????? ???? ???? ???? ? ??? ??? ??? ???? ???? ???? 3.0 ??? ??? ??? ????????????????????????????????? switching characteristics ????????????????????????????????? ????????????????????????????????? (see figure 1) ?????? ?????? ?????????????? ?????????????? ?????????????? ?????????????? ?????????????? 2.0%, i b1 = i b2 , r c & r b varied, t j = 25 c) ????? ????? ???? ???? ? ??? ??? 0.15 ???? ???? ? ??? ??? s ?????? ?????? ????? ????? ???? ???? ? ??? ??? 0.55 ???? ???? ? ??? ??? s ?????? ?????? ????? ????? ???? ???? ? ??? ??? 2.5 ???? ???? ? ??? ??? s ?????? ?????? ????? ????? ???? ???? ? ??? ??? 2.5 ???? ???? ? ??? ??? s 2. pulse test: pulse width = 300 s, duty cycle 2.0%. figure 1. switching times test circuit 10 0.2 figure 2. switching times i c , collector current (amp) t, time (s) 5.0 2.0 0.5 0.1 0.5 1.0 3.0 5.0 10 20 0.2 pnp npn t f t r t s t d @ v be(off) = 0 v 2 approx +12 v v 1 appox. -8.0 v t r , t f 10 ns duty cycle = 1.0% 25 s 0 r b 51 d 1 +4.0 v v cc -30 v r c tut 8.0 k 40 scope for t d and t r , d1 is disconnected and v 2 = 0 r b & r c varied to obtain desired current levels d 1 , must be fast recovery type, eg: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c for npn test circuit reverse diode and voltage polarities. 1.0
tip140, tip141, tip142, (npn); tip145, tip146, tip147, (pnp) http://onsemi.com 4 v ce(sat) , collector-emitter saturation voltage (volts) v be , base-emitter voltage (volts) v be , base-emitter voltage (volts) 5000 0.5 figure 3. dc current gain versus collector current i c , collector current (amps) 300 1.0 2.0 3.0 5.0 7.0 10 500 h fe , dc current gain v ce = 4.0 v 4.0 npn tip140, tip141, tip142 pnp tip145, tip146, tip147 figure 4. collector ? emitter saturation voltage 5.0 -75 t j , junction temperature ( c) 0.5 i c = 10 a, i b = 4.0 ma 2.0 3.0 4.0 -75 t j , junction temperature ( c) -25 25 75 175 3.6 3.2 2.8 2.4 0.8 figure 5. base ? emitter voltage 2000 1000 t j = 150 c 25 c -55 c i c , collector current (amps) h fe , dc current gain t j , junction temperature ( c) t j , junction temperature ( c) 125 20,000 1000 2000 3000 5000 10,000 7000 1.0 0.7 0.5 v ce(sat) , collector-emitter saturation voltage (volts) 0.5 1.0 2.0 3.0 5.0 7.0 10 4.0 0.7 -50 -25 0 25 50 75 100 125 150 175 5.0 -75 2.0 3.0 1.0 0.7 -50 -25 0 25 50 75 100 125 150 175 2.0 1.6 1.2 4.0 -75 -25 25 75 175 3.6 3.2 2.8 2.4 0.8 125 2.0 1.6 1.2 100 c t j = 150 c 100 c 25 c -55 c v ce = 4.0 v i c = 5.0 a, i b = 10 ma i c = 1.0 a, i b = 2.0 ma i c = 10 a, i b = 4.0 ma i c = 5.0 a, i b = 10 ma i c = 1.0 a, i b = 2.0 ma v ce = 4.0 v i c = 10 a 5.0 a 1.0 a v ce = 4.0 v i c = 10 a 5.0 a 1.0 a typical characteristics
tip140, tip141, tip142, (npn); tip145, tip146, tip147, (pnp) http://onsemi.com 5 active ? region safe operating area there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. secondary breakdown limit bonding wire limit thermal limitation @ t c = 25 c figure 6. active ? region safe operating area dc v ce , collector-emitter voltage (volts) 2.0 i c , collector current (amp) (ma) 10 10 0.2 5.0 20 1.0 20 t j = 150 c 50 30 tip140, 145 3.0 7.0 15 70 100 tip141, 146 tip142, 147 i c , collector current (amps) 15 10 1.0 2.0 5.0 7.0 figure 7. unclamped inductive load l, unclamped inductive load (mh) 0.5 1.0 2.0 5.0 10 20 50 100 100 mj input mps-u52 50 50 r bb1 1.5k r bb2 = 100 v bb2 = 0 v bb1 = 10 v tut v ce monitor 100 mh v cc = 20 v i c monitor r s = 0.1 test circuit note 1: input pulse width is increased until i cm = 1.42 a. note 2: for npn test circuit reverse polarities. input voltage collector current 1.42 a v ce(sat) -20 v collector voltage v (br)cer w 7.0 ms (see note 1) 5.0 v 0 100 ms 0 voltage and current waveforms figure 8. inductive load
tip140, tip141, tip142, (npn); tip145, tip146, tip147, (pnp) http://onsemi.com 6 p d , power dissipation (watts) pnp npn figure 9. magnitude of common emitter small ? signal short ? circuit forward current transfer ratio f, frequency (mhz) 2.0 1.0 10 5.0 100 1.0 3.0 5.0 7.0 2.0 7.0 10 v ce = 10 v i c = 1.0 a t j = 25 c 5.0 4.0 0 1.0 2.0 3.0 figure 10. free ? air temperature power derating t a , free-air temperature ( c) 0 40 80 120 160 200 h fe , small-signal forward current transfer ratio 20 50 70 pnp npn
tip140, tip141, tip142, (npn); tip145, tip146, tip147, (pnp) http://onsemi.com 7 package dimensions sot ? 93 (to ? 218) case 340d ? 02 issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069 to ? 247 case 340l ? 02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 3: pin 1. base 2. collector 3. emitter 4. collector
tip140, tip141, tip142, (npn); tip145, tip146, tip147, (pnp) http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 tip140/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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